The PhD work will be carried out within the Tunnel junction and its applications for GaN based optoelectronics project funded by TEAM-
TECH programme of the Foundation for Polish Science .
New concept of p-n tunnel junctions and their application in novel optoelectronic GaN-based devices will be investigated.
Tunnel junctions may be applied to multicolor LEDs, vertical laser diodes, high power laser diode arrays, efficient solar cells or vertical n-
p-n transistors. These devices will be fabricated using plasma assisted molecular beam epitaxy.
The project will involve collaboration between the Institute of High Pressure Physics Polis Academy of Sciences, Faculty of Physics Warsaw University, Faculty of Physics Wrocław University of Technology, Technical Universities of Madrid and Montpellier and TopGaN company, that develops commercial nitride laser diode solutions.
The innovative concept proposed in the project is based on the unique construction of the p-n tunnel junction that provides high tunneling efficiency through the junction minimizing its resistivity.
The concept makes use of very high electric fields present in wurtzite crystal structure that modify the nitride tunnel junctions properties.
We will aim at fabrication of micro LEDs and arrays of micro-LEDs as efficient pumps for single photon emitters from 2D materials (hBN, MoS2).
Scientific results obtained in the Project will be commercialized in TopGaN company that will support the scientists in laser diodes and LEDs processing.
PhD position is offered for 25 months from 01.12.2019 till 31.12.2020
The responsibilities of the PhD student will involve :
1. Molecular Beam Epitaxy (MBE)of laser diode structures with tunnel junction
2. Optical and electrical characterization of LEDs : electroluminescence, L-I-V measurements , IQE
3. Theoretical calculations on the carrier injection to the active region, tunnel junction optimization for decreased series resistance at low temperatures